| 发明名称 |
Dc amplifier and semiconductor integrated circuit therefor |
| 摘要 |
A rectangular parallelepiped projecting portion 21 having a height of H<SUB>B </SUB>and a width of W<SUB>B </SUB>is formed on a silicon substrate, and a gate oxide film is formed on a part of the top surface and the side surface of the projecting portion 21 . A source and a drain are formed on both sides of the gate electrode 26 to form a MOS transistor. The MOS transistor configures a DC amplifier. The DC amplifier includes a differential amplification circuit having MOS transistors 61 and 62 , thereby realizing a high-gain DC amplifier.
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| 申请公布号 |
US2006138476(A1) |
申请公布日期 |
2006.06.29 |
| 申请号 |
US20050560704 |
申请日期 |
2005.12.13 |
| 申请人 |
NISHIMUTA TAKEFUMI;MIYAGI HIROSHI;OHMI TADAHIRO;SUGAWA SHIGETOSHI;TERAMOTO AKINOBU |
发明人 |
NISHIMUTA TAKEFUMI;MIYAGI HIROSHI;OHMI TADAHIRO;SUGAWA SHIGETOSHI;TERAMOTO AKINOBU |
| 分类号 |
H01L29/76;H01L21/336;H01L21/8238;H01L27/092;H01L29/78;H01L29/786;H03F3/343;H03F3/45 |
主分类号 |
H01L29/76 |
| 代理机构 |
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