| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a polymer for upper anti-reflective coating that is used in immersion lithography without being dissolved in water, prevents multiple interaction of light in a photoresist film during photoresist pattern formation, and can suppress variation of photoresist pattern size and width due to thickness variation of the photoresist film, and to provide its preparation method. <P>SOLUTION: The polymer represented by formula 1 and having a weight-average molecular weight within a specific range (1,000-1,000,000) is used for an upper anti-reflective coating. In the formula 1, R1 and R2 are each H, F, methyl or fluoromethyl; R3 and R4 are each a 1-10C hydrocarbon or a 1-10C hydrocarbon in which part or all of H atoms have been substituted by F atoms; and a, b, c, d and e each denote 0.05-0.9 as a molar fraction of each monomer. <P>COPYRIGHT: (C)2006,JPO&NCIPI |
