| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To write information by each bit in an OTP memory using a storage element of an insulation film breakdown type which stores the information by breakdown of a gate insulation film. <P>SOLUTION: For example, a data sense program circuit 31, a data control circuit 41 and a data holding circuit 42 are connected to each data line DL connected to a prescribed number of storage cells 11. Among all the data line DL precharged with high voltage, the voltage of the data lines DL respectively connected to the storage cells 11 into which "1" has to be written is controlled by the data sense program circuit 31, the data control circuit 41 and the data holding circuit 42 so as to be lower by each data line DL in order from the data line DL of the higher order (or the lower order) of them. <P>COPYRIGHT: (C)2006,JPO&NCIPI</p> |
