| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor wafer with an epitaxially deposited layer which has especially low resistivity, and has a substrate wafer of single crystal silicon doped with dopant atoms of an n type or p type. SOLUTION: The semiconductor wafer has the substrate wafer of the single crystal silicon doped with the dopant atoms of the n type or p type, with a front surface and a back surface, an epitaxially deposited layer on the front surface of the substrate wafer, and an n<SP>++</SP>or p<SP>++</SP>doped layer, which extends from the front surface of the substrate wafer into the substrate wafer under the epitaxial layer, and has a defined thickness, and has resistivity lower than that of the substrate wafer. COPYRIGHT: (C)2006,JPO&NCIPI
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