| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device and its manufacturing method wherein the pointed shape of the end of a gate electrode which has a silicon layer containing boron and phosphorus as a lowermost layer, whereby an increase of the gate electrode is restricted and a NBTI degradation of a CMOS device is restricted. SOLUTION: The semiconductor device 10 comprises a silicon substrate 11, a gate insulating film 15 formed on the silicon substrate 11, and a gate electrode 17 which is formed on the gate insulating film 15 and has a poly-silicon layer 18b containing boron and phosphorus as a lowermost layer. The ratio of a maximum density of boron in the poly-silicon layer 18b to a minimum density thereof is 100 or lower. COPYRIGHT: (C)2006,JPO&NCIPI
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