| 摘要 |
PROBLEM TO BE SOLVED: To provide the method of manufacturing a solid state image sensor capable of bonding a supporting substrate without providing thermal influence to a wiring layer formed on a semiconductor substrate, and capable of suppressing the generation of strain after bonding. SOLUTION: The method of manufacturing the solid state image sensor comprises a process for forming a photoelectric conversion element PD in the semiconductor substrate 4, a process for forming a wiring unit having a wiring layer 8 in an insulating layer 7 on the front surface side of the semiconductor substrate 4, a process for bonding a supporting substrate 30 through the adhesive layer 9 by forming the adhesive layer 9 on the further front surface side of the wiring unit and effecting heat treatment thereafter, and a process for thinning the semiconductor substrate 4 from the rear surface side of the same. In this case, the solid state image sensor is manufactured by forming a carbon added SiO<SB>2</SB>film employing an organic silicon base material as the adhesive layer 9. COPYRIGHT: (C)2006,JPO&NCIPI
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