| 摘要 |
PROBLEM TO BE SOLVED: To provide a method and a device for forming a silicon acid nitride film, and a program by which a silicon acid nitride film with a desired nitrogen concentration can be continuously and stably formed. SOLUTION: Ammonia is activated by being applied into a reaction tube 2 heated at least to 600°C. The surface of a material in the reaction tube 2 is nitrided until it is almost saturated by the activated ammonia. Continuously, a silicon oxide film is formed at a semiconductor wafer W. The silicon acid nitride film is formed by nitriding the formed silicon oxide film. COPYRIGHT: (C)2006,JPO&NCIPI
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