| 摘要 |
PROBLEM TO BE SOLVED: To completely prevent air bubbles or the like from intruding into an opening part for vertical conduction formed on a base plate when a lower layer wiring is formed by electrolytic plating in a semiconductor device, in which a semiconductor constituting body having a columnar electrode on the base plate is provided in a facedown state, and the lower layer wiring is provided under the base plate by being electrically connected to the columnar electrode of the semiconductor constituting body. SOLUTION: The vertical conduction part 3 composed of a copper paste or the like is formed in the opening part 2 of the base plate 1 composed of a prepeg material. The semiconductor constituting body 4 is mounted on the upper face of the base plate 1 in a facedown state. Next, the lower layer wiring 23 including a lower layer base metal layer 22 is formed on the lower face of the base plate 1 including the vertical conduction part 3. On that occasion, the vertical conductor 3 is formed in the opening 2 of the base plate 1. Consequently, it is possible to completely prevent the air bubbles or the like from intruding into the opening 2 of the base plate 1 when the lower layer wiring 23 is formed by the electrolytic plating. COPYRIGHT: (C)2006,JPO&NCIPI
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