SEMICONDUCTOR SUBSTRATE COMPRISING A PN-JUNCTION AND METHOD FOR PRODUCING SAID SUBSTRATE

摘要

The invention relates to an SOI substrate comprising a support substrate, a dielectric layer and a semiconductor layer. According to the invention, a continuous pn-junction is configured in the semiconductor layer, which can be produced by the application of sub-layers that have a different doping to the SOI substrate. This permits the use of an SOI substrate in the production of semiconductor components and in particular reverse diodes.