METHOD OF FORMING ISOLATION TRENCH WITH SPACER FORMATION

摘要

A strained silicon semiconductor arrangement with a shallow trench isolation (STI) structure has a strained silicon (Si) layer (52) formed on a silicon germanium (SiGe) layer (50). A trench (58) extends through the Si layer (52) into the SiGe layer (50), and sidewall spacers (62) are employed that cover the entirety of the sidewalls within the trench in the SiGe layer (50). Following STI fill, polish and nitride stripping process steps, further processing can be performed without concern of the SiGe layer (50) being exposed to a silicide formation process.