发明名称 |
TRANSISTOR DEVICE AND METHOD OF MANUFACTURE THEREOF |
摘要 |
<p>A method of forming transistors and structures thereof. A CMOS device includes high k gate dielectric materials. A PMOS device includes a gate that is implanted with an n type dopant. The NMOS device may be doped with either an n type or a p type dopant. The work function of the CMOS device is set by the material selection of the gate dielectric materials. A polysilicon depletion effect is reduced or avoided.</p> |
申请公布号 |
WO2006067107(A1) |
申请公布日期 |
2006.06.29 |
申请号 |
WO2005EP56901 |
申请日期 |
2005.12.19 |
申请人 |
INFINEON TECHNOLOGIES AG;LI, HONG-JYH |
发明人 |
LI, HONG-JYH |
分类号 |
H01L27/092;H01L21/8238;H01L29/51 |
主分类号 |
H01L27/092 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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