| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor laser diode with an improved structure which has impurity regions on both sides of a ridge each of which makes a high-order transverse mode lossy to reduce high-order transverse mode oscillation. SOLUTION: The semiconductor laser diode comprises a substrate 110, a first clad layer 120 formed on the substrate 110, an active layer 134 formed on the first clad layer 120, a second clad layer 140 which is formed on the active layer 134 and has a ridge 144 protruding in the vertical direction. On the second clad layer 140, an impurity layer 146 in which an impurity for reducing high-order transverse mode oscillation is diffused is formed on each of both sides of the ridge 144. The impurity is an electron hole or a Zn ion. COPYRIGHT: (C)2006,JPO&NCIPI
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