| 摘要 |
PROBLEM TO BE SOLVED: To provide a means of suppressing a leak current of a reverse-surface channel of a MOSFET formed on an SOS substrate where a thin silicon layer of≤0.1μm is laminated. SOLUTION: A semiconductor device has a silicon film of≤0.1μm formed on a sapphire substrate, a gate electrode formed above the silicon layer, a source layer and a drain layer formed on the silicon layer, a source-side diffusion layer which is formed on the silicon layer between the gate electrode and source layer while extended to below the gate electrode, and has a diffusion depth large enough to reach the interface between the sapphire substrate and silicon layer, the same conductivity type with the source layer, and lower impurity density than the source layer, and a drain-side diffusion layer which is formed on the silicon layer between the gate electrode and drain layer while extended to below the gate electrode, and has the same conductivity type with the drain layer and lower impurity density than the drain layer. COPYRIGHT: (C)2006,JPO&NCIPI
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