发明名称 SEMICONDUCTOR SUBSTRATE CLEANING LIQUID
摘要 PROBLEM TO BE SOLVED: To provide a semiconductor substrate cleaning liquid that does not cause any change with lapse of time in a region from a neutral region to a basic region and is high in oxidizing ability. SOLUTION: The semiconductor substrate cleaning liquid contains quaternary ammonium salt, such as the perchloric acid and/or periodic acid, tetra-alkyl ammonium hydroxy, trialkyl-hydroxy alkyl ammonium hydroxy, etc., and water. In addition, the cleaning liquid can contain a metal deposition preventing agent and chelating agent. It is preferable to adjust the content of the perchloric acid and/or periodic acid to 0.001-10 wt.% of the total weight of the cleaning liquid and the adding amount of the quaternary ammonium salt to 0.001-10 wt.% of the total weight of the cleaning liquid. The semiconductor substrate cleaning liquid is a neutral to basic liquid and it is preferable to maintain the pH of the liquid at 6-12, especially, at 6-9. COPYRIGHT: (C)2006,JPO&NCIPI
申请公布号 JP2006173454(A) 申请公布日期 2006.06.29
申请号 JP20040365941 申请日期 2004.12.17
申请人 TOSOH CORP 发明人 TAKAHASHI FUMIHARU;HARA YASUSHI;HAYASHI HIROAKI
分类号 H01L21/304;C11D7/18;C11D7/32;C11D17/08 主分类号 H01L21/304
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