| 摘要 |
A semiconductor memory device and a method for fabricating a semiconductor memory device are provided. A semiconductor memory device includes a substrate, an inter-layer insulation layer including a storage node contact hole and formed on the substrate, a pair of storage node contact spacers formed on sidewalls of the storage node contact hole and having upper portions recessed to a predetermined depth, a storage node contact plug covering the upper portions of the storage node contact spacers and filling the storage node contact hole, a bottom electrode connected to the storage node contact plug and a dielectric layer and a top electrode stacked on the bottom electrode.
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