| 摘要 |
A CMOS image sensor includes a semiconductor substrate with a first conductive type including a photodiode region and a transistor region, a gate electrode formed on the transistor region of the substrate, a first impurity region with a second conductive type formed in a portion of the semiconductor substrate between the photodiode region and the gate electrode, and a second impurity region with the second conductive type formed in the photodiode region of the semiconductor substrate.
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