发明名称 CMOS image sensor and method for fabricating the same
摘要 A CMOS image sensor and a method for fabricating the same are disclosed, in which a dark current is prevented from being generated between a device isolation film and a photodiode region to improve characteristics of the image sensor.
申请公布号 US2006138470(A1) 申请公布日期 2006.06.29
申请号 US20050318439 申请日期 2005.12.28
申请人 HAN CHANG H 发明人 HAN CHANG H.
分类号 H01L27/148 主分类号 H01L27/148
代理机构 代理人
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