SEMICONDUCTOR DEVICE AND ITS MANUFACTURING METHOD

摘要

PROBLEM TO BE SOLVED: To reduce the width of element separation without degrading the characteristics of a semiconductor device. SOLUTION: The element separation 2 formed on a boundary between an n-type well 3 and a p-type well 4 is provided with a first element separation 21, and a second element separation 22 formed immediately below the first element separation 21. An n-type channel cut layer 5 is formed at the vicinity of bottom surface of the first element separation 21 in the n-type well 3 and a p-type channel cut layer 6 is formed at the vicinity of bottom surface of the first element separation 21 of the p-type well 4. The n-type channel cut layer 5 is separated from the p-type channel cut layer 6 through the second element separation 22. COPYRIGHT: (C)2006,JPO&NCIPI