发明名称 Non-volatile semiconductor storage device performing ROM read operation upon power-on
摘要 A power-on reset circuit has a power-on level detecting circuit which detects a power voltage to output a power-on reset signal and a delay circuit which delays the power-on reset signal output by the power-on level detecting circuit. Two chip address specifying pads are connected to the delay circuit. Delay time in the delay time is controlled according to a chip address supplied to these two pads.
申请公布号 US2006139985(A1) 申请公布日期 2006.06.29
申请号 US20060359898 申请日期 2006.02.16
申请人 KABUSHIKI KAISHA TOSHIBA 发明人 KANDA KAZUSHIGE;NAKAMURA HIROSHI
分类号 G11C16/02;G11C17/00;G11C5/00;G11C7/00;G11C16/06;G11C16/20;G11C16/30;H01L27/115 主分类号 G11C16/02
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