发明名称 |
Method for depositing titanium oxide layer and method for fabricating capacitor by using the same |
摘要 |
Disclosed are a method for depositing a titanium oxide (TiO<SUB>2</SUB>) layer and a method for fabricating a capacitor by using the same. The method for forming the TiO<SUB>2 </SUB>layer includes the steps of: a) adsorbing titanium hydride (TiH<SUB>2</SUB>) on a wafer loaded into a chamber by supplying TiH<SUB>2 </SUB>to the chamber; b) purging out the non-adsorbed TiH<SUB>2</SUB>; c) forming an TiO<SUB>2 </SUB>layer on the wafer by inducing a reaction between the TiH<SUB>2 </SUB>and the oxygen source with supplying an oxygen source as a reaction gas to the chamber; and d) purging out the non-reacted oxygen source and a by-product. The method for fabricating the capacitor includes the steps of: forming a lower electrode on a wafer; depositing a titanium oxide (TiO<SUB>2</SUB>) layer on the lower electrode by using titanium hydride (TiH<SUB>2</SUB>) as a precursor; and forming an upper electrode on the TiO<SUB>2 </SUB>layer.
|
申请公布号 |
US2006141702(A1) |
申请公布日期 |
2006.06.29 |
申请号 |
US20050150421 |
申请日期 |
2005.06.09 |
申请人 |
WOO HYUN-KYUNG;YEOM SEUNG-JIN;KIL DEOK-SIN;HONG KWON |
发明人 |
WOO HYUN-KYUNG;YEOM SEUNG-JIN;KIL DEOK-SIN;HONG KWON |
分类号 |
H01L21/8242;H01L21/20;H01L21/44 |
主分类号 |
H01L21/8242 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|