发明名称 Digital temperature sensing device using temperature depending characteristic of contact resistance
摘要 A digital temperature sensing device uses temperature depending characteristic of contact resistance of a MOS transistor and a self-refresh driving device adjusts its self-refresh period depending on temperature using the digital temperature sensing device. The self-refresh driving device includes a first reference voltage generating unit for generating a reference voltage robust to temperature, the first reference voltage generating means being formed with a plurality of MOS transistors, the number of source contacts of the MOS transistors being adjusted such that variation of saturation current through source-drain is compensated for; a second reference voltage generating unit for generating a second reference voltage sensitive to temperature; a level comparator for comparing the first reference voltage with the second reference voltage; and an oscillator for generating a clock signals having differing period depending on the output signal of the level comparator.
申请公布号 US2006138582(A1) 申请公布日期 2006.06.29
申请号 US20050146043 申请日期 2005.06.07
申请人 HYNIX SEMICONDUCTOR, INC. 发明人 HAN HI-HYUN;CHOI JUN-GI
分类号 G01K7/00;G01N27/04;H01L31/058 主分类号 G01K7/00
代理机构 代理人
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