发明名称 |
Digital temperature sensing device using temperature depending characteristic of contact resistance |
摘要 |
A digital temperature sensing device uses temperature depending characteristic of contact resistance of a MOS transistor and a self-refresh driving device adjusts its self-refresh period depending on temperature using the digital temperature sensing device. The self-refresh driving device includes a first reference voltage generating unit for generating a reference voltage robust to temperature, the first reference voltage generating means being formed with a plurality of MOS transistors, the number of source contacts of the MOS transistors being adjusted such that variation of saturation current through source-drain is compensated for; a second reference voltage generating unit for generating a second reference voltage sensitive to temperature; a level comparator for comparing the first reference voltage with the second reference voltage; and an oscillator for generating a clock signals having differing period depending on the output signal of the level comparator.
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申请公布号 |
US2006138582(A1) |
申请公布日期 |
2006.06.29 |
申请号 |
US20050146043 |
申请日期 |
2005.06.07 |
申请人 |
HYNIX SEMICONDUCTOR, INC. |
发明人 |
HAN HI-HYUN;CHOI JUN-GI |
分类号 |
G01K7/00;G01N27/04;H01L31/058 |
主分类号 |
G01K7/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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