发明名称 |
SEMICONDUCTOR DEVICE USING A NITRIDE SEMICONDUCTOR |
摘要 |
A semiconductor device includes: a first semiconductor layer represented by a composition formula Al<SUB>x</SUB>Ga<SUB>1-x</SUB>N (0<=x<=1); a first conductivity type or non-doped second semiconductor layer represented by a composition formula Al<SUB>y</SUB>Ga<SUB>1-y</SUB>N (0<=y<=1, x<y) and formed on the first semiconductor layer; a second conductivity type third semiconductor layer represented by a composition formula Al<SUB>x</SUB>Ga<SUB>1-x</SUB>N (0<=x<=1) and selectively formed on the second semiconductor layer; a gate electrode formed on the third semiconductor layer; a source electrode electrically connected to the second semiconductor layer; and a drain electrode electrically connected to the second semiconductor layer. The distance between the drain electrode and the third semiconductor layer is longer than the distance between the source electrode and the third semiconductor layer.
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申请公布号 |
US2006138454(A1) |
申请公布日期 |
2006.06.29 |
申请号 |
US20060354148 |
申请日期 |
2006.02.15 |
申请人 |
KABUSHIKI KAISHA TOSHIBA |
发明人 |
SAITO WATARU;OMURA ICHIRO |
分类号 |
H01L29/808;H01L31/0328;H01L21/337;H01L21/338;H01L29/20;H01L29/778;H01L29/78;H01L29/812;H01L31/109 |
主分类号 |
H01L29/808 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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