| 发明名称 |
Freistellenbeherrschendes Silizium mit niedriger Fehlerdichte |
| 摘要 |
The present invention relates to a process for the preparation of single crystal silicon, in ingot or wafer form, which contains an axially symmetric region in which vacancies are the predominant intrinsic point defect and which is substantially free of agglomerated vacancy intrinsic point defects. <IMAGE> |
| 申请公布号 |
DE69831618(T2) |
申请公布日期 |
2006.06.29 |
| 申请号 |
DE1998631618T |
申请日期 |
1998.04.09 |
| 申请人 |
MEMC ELECTRONIC MATERIALS, INC. |
发明人 |
FALSTER, ROBERT;MARKGRAF, STEVE A.;MCQUAID, SEAMUS A.;HOLZER, JOSEPH C.;MUTTI, PAOLO;JOHNSON, BAYARD K. |
| 分类号 |
C30B15/00;C30B29/06;C30B15/14;C30B15/20;C30B15/22;C30B21/06;C30B27/02;C30B28/10;C30B30/04;C30B33/00;H01L21/322;H01L21/324 |
主分类号 |
C30B15/00 |
| 代理机构 |
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