| 摘要 |
<P>PROBLEM TO BE SOLVED: To prevent breakdown caused by heat of adjacent light emitting elements disposed in the same lead member by heat generation from a GaN system semiconductor light emitting element arising from driving. <P>SOLUTION: A GaN system first light emitting element 110 which emits blue light, a GaN system second light emitting element 120 which emits green light, and a third light emitting element 130 which emits red light, are arranged in a first lead electrode 210, a second lead electrode 220, and a third lead electrode 230, respectively, and the lead electrodes are fixed by a fixing member 300. The second part 212 of the first lead electrode 210 and the second part 222 of the second lead electrode 220 are thicker than the second part 232 of the third lead electrode 230, and the second part 232 of the third lead electrode 230 is thicker than a portion corresponding to a second part of a fourth lead electrode 240 or a sixth lead electrode 260. <P>COPYRIGHT: (C)2006,JPO&NCIPI |
