| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a production method by which the single crystal of nitride with good quality and a large diameter can be produced efficiently by preventing the defect from being caused in the single crystal to be obtained, when the single crystal of nitride is produced by a sublimation method. <P>SOLUTION: In a process for raising the temperature of a raw material 9 and a seed crystal 7 in a heating furnace 1 up to a set temperature at a stationary time, the sublimation of the raw material 9 is suppressed by setting the pressure in the heating furnace 1 to a pressure higher than the saturated vapor pressure of the raw material 9 at rising temperatures until the temperature of raw material 9 in the heating furnace 1 reaches the set temperature at the stationary time. After the temperature of the raw material 9 reaches the set temperature at the stationary time, the pressure in the heating furnace 1 is set to a pressure for depositing the raw material 9, that is lower than the pressure in the temperature-raising process. <P>COPYRIGHT: (C)2006,JPO&NCIPI |
