| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for uniformly making amorphous a trench which is easily shaded when ions are implanted for making amorphous and the surface of a tapered silicon projected body. SOLUTION: An angle (a tilt angleθ, a twist angle) of an implantation of an amorphous ion 107 before silicide is limited, and the surface of a trench 402 which is easily shaded when ions are implanted for making amorphous is uniformly made amorphous. By silicifying it after that, a local wire using a silicon surface in a field region is formed, and the source or the drain of an adjacent transistor is locally connected thereto. COPYRIGHT: (C)2006,JPO&NCIPI |
