| 摘要 |
PROBLEM TO BE SOLVED: To provide a plasma etching device capable of properly using a focus ring to its use limit, and a plasma etching method using the same. SOLUTION: The plasma etching device has a container 11 constituted so that its inside can be depressurized, a lower electrode 13 supporting a semiconductor substrate 12 stored in the container 11, a first window 15 which is formed on one side of the outer wall of the container 11 and is transparent to incident light, a light emitter 16 which emits a laser beam to the upper face of the focus ring 14 arranged on the outer periphery of the semiconductor substrate 12 through the first window 15, a second window 17 which is formed on the other side of the outer wall of the container 11 and is transparent to the laser beam reflected from the upper face of the focus ring 14, and a scale 18 formed on the second window 17. COPYRIGHT: (C)2006,JPO&NCIPI
|
