| 摘要 |
A power semiconductor module ( 1 ) with a housing ( 2 ) and at least one semiconductor chip ( 3, 3 ') located in it is devised. At least one semiconductor chip ( 3, 3 ') has a first main electrode side ( 31 ) and a second main electrode side ( 32 ) opposite the first main electrode side, the first main electrode side ( 31 ) making thermal and electrical contact with the first base plate ( 4, 4 '). The first cooling device ( 6 ) makes thermal and electrical contact with the side of the first base plate ( 41 ) facing away from the first main electrode side. The second main electrode side ( 32 ) makes thermal and electrical contact with a second base plate ( 5, 5 '). A second cooling device ( 7 ) makes thermal contact with the side of the second base plate ( 51 ) facing away from the second main electrode side. The heat sink ( 65 ) of the first cooling device is supported against the housing ( 2 ).
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