发明名称 |
Semiconductor device and method of manufacturing the same |
摘要 |
A semiconductor substrate of a first conduction type is provided for serving as a common drain to a plurality of power MISFET cells. A middle semiconductor layer is formed on the semiconductor substrate and has a lower impurity concentration than that of the semiconductor substrate. Pillar regions are formed on the middle semiconductor layer and include semiconductor regions of the first conduction type having a lower impurity concentration than that of the middle semiconductor layer.
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申请公布号 |
US2006138536(A1) |
申请公布日期 |
2006.06.29 |
申请号 |
US20050151410 |
申请日期 |
2005.06.14 |
申请人 |
KABUSHIKI KAISHA TOSHIBA |
发明人 |
KOUZUKI SHIGEO;OKUMURA HIDEKI;SAITO WATARU;IZUMISAWA MASARU;SHIOMI MASAHIKO;KOBAYASHI HITOSHI;TOKANO KENICHI;YANAGISAWA SATOSHI;YOSHIOKA HIRONORI;KIMURA MANABU |
分类号 |
H01L29/76 |
主分类号 |
H01L29/76 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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