发明名称 |
NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE AND FABRICATION METHOD THEREOF |
摘要 |
<p>The present invention relates to a nitride semiconductor light emitting device including: a substrate having a predetermined pattern formed on a surface thereof by an etch; a protruded portion disposed on a non-etched region of the substrate, and having a first buffer layer and a first nitride semiconductor layer stacked thereon; a second buffer layer formed on the etched region of the substrate; a second nitride semiconductor layer formed on the second buffer layer and the protruded portion; a third nitride semiconductor layer formed on the second nitride semi conductor layer; an active layer formed on the third nitride semiconductor layer to emit light; and a fourth nitride semiconductor layer formed on the active layer. According to the present invention, the optical extraction efficiency of the nitride semiconductor light emitting device can be enhanced.</p> |
申请公布号 |
WO2006068377(A1) |
申请公布日期 |
2006.06.29 |
申请号 |
WO2005KR04121 |
申请日期 |
2005.12.05 |
申请人 |
LG INNOTEK CO., LTD;LEE, SUK HUN |
发明人 |
LEE, SUK HUN |
分类号 |
H01L33/06;H01L33/10;H01L33/12;H01L33/32;H01L33/42;H01L33/44 |
主分类号 |
H01L33/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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