| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device wherein no ohmic contact takes place, and to provide its manufacturing method. <P>SOLUTION: An Al-containing ohmic electrode 2, a barrier metallic layer 5 made of TiWN, and an Au wire electrode 7 are sequentially formed on one side of a GaN group semiconductor layer 1. Since the barrier metal layer 5 made of the TiWN is formed between the Al-containing ohmic electrode 2 and the Au wire electrode 7, the reaction can be prevented between the Al in the Al-containing ohmic electrode 2 and the Au in the Au wire electrode 7. Thus, the deterioration can be prevented in the characteristic of the semiconductor device 100. Moreover, since the TiWN is excellent in the barrier performance even at a high temperature region, the reaction can be prevented between the Al in the Al-containing ohmic electrode 2 and the Au in the Au wire electrode 7 even when a high temperature anneal processing is applied to the semiconductor device 100. <P>COPYRIGHT: (C)2006,JPO&NCIPI |
