| 摘要 |
PROBLEM TO BE SOLVED: To provide a deposited film deposition apparatus capable of mitigating non-uniformity of the thickness of a deposited film. SOLUTION: The deposited film deposition apparatus deposits a deposited film on a surface of a conductive work 22 by the plasma CVD method, and is provided with a film deposition furnace 11, an anode member 1 which is located within the film deposition furnace 11 and equipotential to the film deposition furnace 11, a work holding means 20 which holds a plate-shaped work 22 in the circumferential direction around the anode member 1, and is connected to a negative pole, gas nozzles 23, 33 to feed treatment gas, and a plasma power supply 16 connected to at least the work holding means 20. Preferably, the film deposition furnace 11 is provided with a cylindrical part, and the anode member 1 is coaxially arranged with the film deposition furnace 11, and columnar in shape. COPYRIGHT: (C)2006,JPO&NCIPI
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