Solid-state imaging device and radiation imaging system

摘要

N⁺-type semiconductor regions 12 d are formed on a front surface side of a p^--type layer 12 c of a semiconductor substrate 12 , and these n⁺-type semiconductor and p^--type semiconductor constitute photodiodes. A metal wire 14 connected to an isolation region 12 e is formed on a first insulating layer 13 . The metal wire 14 is provided so as to extend along a row direction and along a column direction between adjacent n⁺-type semiconductor regions 12 d, and is of grid shape when viewed from a direction of incidence of light. Signal readout lines 53 are formed on a third insulating layer 16 . The signal readout lines 53 are made of metal such as aluminum, are located above the n⁺-type semiconductor regions 12 d when viewed from the direction of incidence of light, and are provided so as to extend along the column direction.