| 摘要 |
Provided is a method for manufacturing a semiconductor device comprising forming a device isolation layer on a semiconductor substrate; forming gate insulating layers on the upper part of the semiconductor substrate having the device isolation layers formed thereon; forming an undoped layer for a gate electrode; implanting mixed dopant ions consisting of at least two dopant ions containing <SUP>11</SUP>B ions into the undoped layer, utilizing an ion-implantation mask; and heat-treating the mixed dopant ion-implanted layer.
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