发明名称 |
MASK, ITS MANUFACTURING METHOD, THREE-DIMENSIONAL FINE STRUCTURE, AND ITS MANUFACTURING METHOD |
摘要 |
<P>PROBLEM TO BE SOLVED: To easily provide a complicated three-dimensional fine structure and a mask having large changes in transmittance for X-rays or the like. <P>SOLUTION: The mask 10 has a transmissive part 12 and an absorber 13 (13d, 13f) held by the transmissive part 12, and is used to transfer a pattern onto a resist by lithography. The material of the absorber 13 has a pattern corresponding to the pattern to be transferred onto a resist, and exposure depth of the resist varies in accordance with the pattern of the material of the absorber 13. <P>COPYRIGHT: (C)2006,JPO&NCIPI |
申请公布号 |
JP2006171203(A) |
申请公布日期 |
2006.06.29 |
申请号 |
JP20040361470 |
申请日期 |
2004.12.14 |
申请人 |
SUMITOMO ELECTRIC IND LTD |
发明人 |
NAKAMAE KAZUO;HIRATA YOSHIHIRO |
分类号 |
G03F7/20;G03F1/22 |
主分类号 |
G03F7/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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