发明名称 MASK, ITS MANUFACTURING METHOD, THREE-DIMENSIONAL FINE STRUCTURE, AND ITS MANUFACTURING METHOD
摘要 <P>PROBLEM TO BE SOLVED: To easily provide a complicated three-dimensional fine structure and a mask having large changes in transmittance for X-rays or the like. <P>SOLUTION: The mask 10 has a transmissive part 12 and an absorber 13 (13d, 13f) held by the transmissive part 12, and is used to transfer a pattern onto a resist by lithography. The material of the absorber 13 has a pattern corresponding to the pattern to be transferred onto a resist, and exposure depth of the resist varies in accordance with the pattern of the material of the absorber 13. <P>COPYRIGHT: (C)2006,JPO&NCIPI
申请公布号 JP2006171203(A) 申请公布日期 2006.06.29
申请号 JP20040361470 申请日期 2004.12.14
申请人 SUMITOMO ELECTRIC IND LTD 发明人 NAKAMAE KAZUO;HIRATA YOSHIHIRO
分类号 G03F7/20;G03F1/22 主分类号 G03F7/20
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