| 摘要 |
<P>PROBLEM TO BE SOLVED: To obtain a semiconductor device having excellent characteristics and enhanced reliability in which an SiC wafer can be employed. <P>SOLUTION: A plurality of Schottky barrier diode units 10 are formed in an SiC chip 9 and each unit 10 has an independent external output electrode 4. A bump 11 (having a diameter of several tens to several hundreds μm) is formed only on the external output electrode 4 of an acceptable unit out of the units 10 formed in the SiC chip 9, and a bump is not formed on the external output electrode 4 of a rejectable unit having no breakdown voltage or a large leakage current. Since a bump is not formed in a rejectable unit, the Schottky barrier side electrode 3 is connected from the external output electrode 4 to the bump 11, the wiring layer 13 on a wiring board 12 and an external lead 13a in parallel with the outside, and only the external output electrode 4 of an acceptable unit 10 is connected in parallel. <P>COPYRIGHT: (C)2006,JPO&NCIPI |
