| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a semiconductor device which is capable of realizing a stable drain current and a sufficient gate leakage current reduction effect using a gate insulating film that is below 10 nm in thickness and enables a high gain to be realized in a GaN HFET, and capable of using a high-quality insulating film which is high in general-purpose properties and easily manufactured. <P>SOLUTION: The semiconductor device is equipped with an Si<SB>3</SB>N<SB>4</SB>film 41A formed on the surface of an HFET substrate formed of nitride semiconductor, an SiO<SB>2</SB>film 41B formed on the Si<SB>3</SB>N<SB>4</SB>film 41A, and a gate electrode 42 formed on the SiO<SB>2</SB>film 41B. The Si<SB>3</SB>N<SB>4</SB>film 41A and the SiO<SB>2</SB>film 41B are 0.28 to 3 nm and 0.5 to 7 nm in thickness, respectively. <P>COPYRIGHT: (C)2006,JPO&NCIPI</p> |
