MANUFACTURING METHOD OF DIELECTRIC CAPACITANCE ELEMENT

摘要

PROBLEM TO BE SOLVED: To provide a manufacturing method of a dielectric capacitance element which can keep uniformity inside an etched semiconductor substrate. SOLUTION: The method comprises a process for forming an SiO2film 115 having a plurality of projections formed by turnback of a bevel on a GaAs epitaxial substrate 101; a process for forming a lower electrode 106 on the SiO2film 115; a process for forming an SrTiO3film 107 on the lower electrode 106; a process for forming an upper electrode 108 on the SrTiO3film 107; and a process for dry-etching the upper electrode 108 and the SrTiO3film 107 leaving a prescribed region alone. COPYRIGHT: (C)2006,JPO&NCIPI