| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device which is highly reliable by using a protective diode so as not to degrade the characteristic of the semiconductor device, as well as to prevent the occurrence of plasma charging damage in the plasma process of a wiring formation step. SOLUTION: A semiconductor element having a gate insulating film 6 and a gate electrode 7 is formed on a semiconductor substrate 1, and a first wiring 16A connected electrically with the gate electrode 7 and a second wiring 16B connected electrically with the semiconductor substrate 1 are formed at any space in a second interlayer insulating film 14 formed on the semiconductor element. The upper layer of the second interlayer insulating film 14 is formed of a silicon nitride film 13, which is an insulator displaying conductivity in a plasma atmosphere. COPYRIGHT: (C)2006,JPO&NCIPI
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