| 发明名称 |
One time programmable memory |
| 摘要 |
A one time programmable memory includes isolated gate transistors that may be programmed by subjecting the isolated gate transistors to voltage conditions that degrade characteristics of the isolated gate transistors. The degraded characteristics may be sensed to read the memory.
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| 申请公布号 |
US2006139995(A1) |
申请公布日期 |
2006.06.29 |
| 申请号 |
US20040027476 |
申请日期 |
2004.12.28 |
| 申请人 |
KESHAVARZI ALI;PAILLET FABRICE;KHELLAH MUHAMMAD M;SOMASEKHAR DINESH;YE YIBIN;TANG STEPHEN H;ALAVI MOHSEN;DE VIVEK K |
发明人 |
KESHAVARZI ALI;PAILLET FABRICE;KHELLAH MUHAMMAD M.;SOMASEKHAR DINESH;YE YIBIN;TANG STEPHEN H.;ALAVI MOHSEN;DE VIVEK K. |
| 分类号 |
G11C11/34 |
主分类号 |
G11C11/34 |
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