发明名称 Methods for silicon electrode assembly etch rate and etch uniformity recovery
摘要 Methods for cleaning an electrode assembly, which can be used for etching a dielectric material in a plasma etching chamber after the cleaning, comprise polishing a silicon surface of the electrode assembly, preferably to remove black silicon contamination therefrom.
申请公布号 US2006138081(A1) 申请公布日期 2006.06.29
申请号 US20040019729 申请日期 2004.12.23
申请人 LAM RESEARCH CORPORATION 发明人 HUANG TUOCHUAN;REN DAXING;SHIH HONG;ZHOU CATHERINE;YAN CHUN;MAGNI ENRICO;YEN BI M.;HUBACEK JEROME;LIM DAE J.;SUNG DOUGYONG
分类号 B44C1/22;C23F1/00 主分类号 B44C1/22
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