发明名称 |
Tensile strained substrate |
摘要 |
An exemplary embodiment relates to a method for forming a metal oxide semiconductor field effect transistor (MOSFET). The method includes providing a substrate having a gate formed above the substrate and performing at least one of the following depositing steps: depositing a spacer layer and forming a spacer around a gate and gate insulator located above a layer of silicon above the substrate; depositing an etch stop layer above the spacer, the gate, and the layer of silicon; and depositing a dielectric layer above the etch stop layer. At least one of the depositing a spacer layer, depositing an etch stop layer, and depositing a dielectric layer comprises high compression deposition which increases in tensile strain in the layer of silicon.
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申请公布号 |
US2006138479(A1) |
申请公布日期 |
2006.06.29 |
申请号 |
US20060356606 |
申请日期 |
2006.02.17 |
申请人 |
ADVANCED MICRO DEVICES, INC. |
发明人 |
NGO MINH V.;BESSER PAUL R.;LIN MING R.;WANG HAIHONG |
分类号 |
H01L29/76;H01L23/58;H01L29/10 |
主分类号 |
H01L29/76 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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