| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device that can suppress dishing and erosion in a step of removing a wiring layer in an electrode pad region buried in a wiring groove formed on an insulating film by polishing by using a CMP method. <P>SOLUTION: In the electrode pad region 10 composed a low-permittivity film 537 and wiring 555 formed in the groove of a cap film 538 by using a damascene method, a plurality of rectangular insulating sections 13 extended in the wiring leading-out direction 11 from an electrode pad exists in a island-like state in a top view except the central portion 41 of an electrode pad. <P>COPYRIGHT: (C)2006,JPO&NCIPI |
