| 摘要 |
<P>PROBLEM TO BE SOLVED: To permit the manufacturing of a light emitting diode with excellent crystallinity through the reduced amount of Zn charge than before by preventing Zn diffusion of Zn dopant upon temperature rise to supply stable Zn dopant and preventing the participation of the same into an n-type layer. <P>SOLUTION: In the manufacturing method of an epitaxial wafer for light emitting diode, the epitaxial layer of a compound semiconductor is grown employing an epitaxial growing device with a substrate holder 12 for receiving a substrate 1 for growing, and a raw material solution holder 13 having two sets or more of raw material solution reservoirs 15 in the sliding direction which are opposed so as to be relatively slidable. Partitioning plates 20, 30 are inserted into one of the raw material solution reservoirs 15 to partition the raw material solution into up-and-down three layers, and the raw material solution in respective chambers is dropped into a lower layer to use the same for the epitaxial growth by pulling out the partitioning plates 20, 30. <P>COPYRIGHT: (C)2006,JPO&NCIPI |
