METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor device having a memory cell of a floating gate structure which can form a silicon nitride film without involving reduction in yield while suppressing fluctuations in transistor threshold voltage as an etching stop layer for the processing of a bottom borderless contact on a control gate electrode. SOLUTION: A silicon nitride film 115 is formed as an etching stop layer for the processing of a bottom borderless contact on a control gate electrode 105 of a memory cell so that a hydrogen (H2) concentration in the film is in a range of 1.5×1021to 2.6×1021atoms/cm3. Further, the silicon nitride film 115 is formed at a temperature of 700°C or lower by a low-pressure CVD method. COPYRIGHT: (C)2006,JPO&NCIPI