发明名称 THIN FILM FORMATION DEVICE
摘要 PROBLEM TO BE SOLVED: To provide a thin film formation device for fixing formation conditions of an oxide film formed on the surface of an object treated by preventing oxidizing gas used for a thin film formation device from being spent on the oxidization of the internal wall of a vacuum treatment chamber or the surface of a component. SOLUTION: In this thin film formation device for introducing oxidizing gas to the inside of a treatment chamber 1, and for forming an oxide film on an object 4 to be treated, component surfaces 1, 2 and 3 with which the oxidizing gas is brought into contact are coated with a fine oxide film whose thickness is 1μm or less. COPYRIGHT: (C)2006,JPO&NCIPI
申请公布号 JP2006173413(A) 申请公布日期 2006.06.29
申请号 JP20040365120 申请日期 2004.12.16
申请人 ULVAC JAPAN LTD 发明人 INAYOSHI SAKAE;MORITA TADASHI
分类号 H01L21/31;C23C8/12;C23C8/16;C23C8/80;C25D11/04 主分类号 H01L21/31
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