| 摘要 |
PROBLEM TO BE SOLVED: To provide a manufacturing method of a solid state imaging apparatus capable of restraining bad transfer from happening owing to a potential difference in the transfer of electric charges, and also to provide the solid state imaging device. SOLUTION: The manufacturing method comprises a process of forming a nitride film 13 on the surface of a semiconductor substrate 11, a process of forming an oxide film 14 on the nitride film 13, and a process of forming a transfer gate electrode 18 on the oxide film 14. It is hereby possible to set the oxide film 14 such as an HTO film on the nitride film 13 into a predetermined film thickness, and to increase the thickness of the oxide film 14 formed as a result. It is therefore possible to stop the reduction of the nitride film 13 due to etching in the formation of the transfer gate at the oxide film 14 on the nitride film 13, and restrain bad transfer from happening in the transfer of electric charges. COPYRIGHT: (C)2006,JPO&NCIPI
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