| 摘要 |
PROBLEM TO BE SOLVED: To improve production efficiency of a silicon electrode plate by preventing the occurrence of crystal cracks in the cutting process. SOLUTION: The method for producing a silicon single crystal comprises a step for pulling up a silicon single crystal rod 25 having a given length while surrounding it with a cylindrical heat-shielding member 36 from a silicon melt 12 that is obtained by heat-melting a silicon raw material stored in a quartz crucible 13 installed in a CZ furnace 11 by means of an electric heater 18, a step for separating the silicon single crystal rod from the silicon melt by temporally lowering the crucible, and a step for heat-treating the lower part of the silicon single crystal rod for a given period of time by exposing the lower part from the bottom end of the heat-shielding member by lowering the separated silicon single crystal rod and the crucible together to a given position and by directly exposing the exposed lower part to the heat of the heater. COPYRIGHT: (C)2006,JPO&NCIPI
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