| 摘要 |
An exemplary method of manufacturing a shallow trench isolation structure in a semiconductor device includes forming a first trench region by etching the semiconductor substrate to a predetermined depth, forming a first oxide layer on the entire surface of the semiconductor substrate so as to fill the first trench region, forming an epitaxial layer in an active region on the semiconductor substrate, and forming a second oxide layer so as to fill a gap between portions of the epitaxial layer. Consequently, a void due to incomplete gap-filling of conventional shallow trench isolation structures may be prevented by a two step gap-fill process using the epitaxial layer.
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