| 摘要 |
A method of forming a pad and a fuse in a semiconductor device. A copper layer located in both a fuse region and a pad region is formed in a dielectric layer. A first insulating layer is formed on the dielectric layer to cover the copper layer and selectively etched to expose the copper layer in the fuse region. An aluminum fuse is formed on the first insulating layer in the fuse region and connected to the exposed copper layer. A second insulating layer is formed on both the aluminum fuse and the first insulating layer and selectively etched together with the first insulating layer to expose the underlying copper layer in the pad region. An aluminum pad is formed on the second insulating layer in the pad region and connected to the exposed copper layer in the pad region. At least one third insulating layer is formed on both the aluminum pad and the second insulating layer and selectively etched to expose the aluminum pad only.
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